Preparation of Bismuth Titanate Films by Electron Cyclotron Resonance Plasma Sputtering-Chemical Vapor Deposition
نویسندگان
چکیده
Bismuth titanate (Bi,Ti,O,, :BIT) thin films were prepared on the Pt courted MgO(100) substrate by electron cyclotron resonance plasma sputtering-chemical vapor deposition (ECR plasma sputtering-CVD). Bi20, was used as a sputtering target and tetra-isopropoxy-titanium [Ti(i-C3H70)4] as a CVD source. The composition of films was controlled by changing RF power (P,,) of Bi,O, target and Ti source temperature (TTi). The stoichiometric BIT film was prepared under the condition of PR,=500W, Tn=630C, deposition temperature of 650°C and deposition rate of 14 nmlmin. Epitaxial relationships between the BIT film and the substrate were determined Mg0(100)11Pt(l00)NBIT(001) and MgO<100>lIPt<100>IIBIT<1 lo>. The remanent polarization and coercive field measured by a Sawyer and Tower bridge circuit at 50 Hz were 1.12 pC/cm2 and 46 kVlcm, respectively.
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